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| PNP Silicon High Voltage Transistors SXTA 92 SXTA 93 High breakdown voltage q Low collector-emitter saturation voltage q Type SXTA 92 SXTA 93 Marking 2D 2E Ordering Code (tape and reel) Q68000-A8393 Q68000-A8651 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 130 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol SXTA 92 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 300 300 Values SXTA 93 200 200 5 500 1 150 Unit V mA W C - 65 ... + 150 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXTA 92 SXTA 93 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SXTA 92 SXTA 93 Collector-base breakdown voltage IC = 100 A SXTA 92 SXTA 93 Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 160 V, IE = 0 VCB = 200 V, IE = 0, TA = 125 C VCB = 160 V, IE = 0, TA = 125 C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V SXTA 92 SXTA 93 SXTA 92 SXTA 93 IEB0 hFE 25 40 25 25 VCEsat - - VBEsat - - - - 0.5 0.4 0.9 - - - - - - - - V V(BR)CE0 300 200 V(BR)CB0 300 200 V(BR)EB0 ICB0 - - - - - - - - - - 250 250 20 20 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 5 nA - SXTA 92 SXTA 93 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SXTA 92 SXTA 93 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 20 V, f = 1 MHz SXTA 92 SXTA 93 fT Cobo 50 - - MHz pF - - - - 6 8 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SXTA 92 SXTA 93 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 20 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 C, D = 0 Semiconductor Group 3 SXTA 92 SXTA 93 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4 |
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